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Datasheet File OCR Text: |
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.472 (Typ.) SSH7N80A BVDSS = 800 V RDS(on) = 1.8 ID = 7 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds Value 800 7 4.4 1 O Units V A A V mJ A mJ V/ns W W/ C 28 + 30 _ 523 7 20 2.0 200 1.59 - 55 to +150 O 1 O 1 O 3 O 2 C 300 Thermal Resistance Symbol R R R JC CS JA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -- Max. 0.63 -40 Units C/W Rev. B (c)1999 Fairchild Semiconductor Corporation SSH7N80A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge Min. Typ. Max. Units 800 -2.0 -----------------0.93 ------4.95 140 57 23 40 92 34 67 11.2 29.6 --3.5 100 -100 25 250 1.8 -165 66 55 90 195 80 88 --nC ns A pF V V/ C V nA Test Condition VGS=0V,ID=250A ID=250A VGS=30V VGS=-30V VDS=800V VDS=640V,TC=125 C VGS=10V,ID=0.85A VDS=50V,ID=0.85A 4 O* 4 O See Fig 7 VDS=5V,ID=250A 1500 1950 VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=400V,ID=2A, RG=16 See Fig 13 45 OO VDS=640V,VGS=10V, ID=2A See Fig 6 & Fig 12 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------520 6.66 7 28 1.4 --A V ns C Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=7A,VGS=0V TJ=25 C,IF=7A diF/dt=100A/s 4 O Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 L=20mH, I =7A, V =50V, R =27, Starting T =25 C O AS DD G J 3 _ _ _ O ISD < 7A, di/dt <150A/ s, VDD N-CHANNEL POWER MOSFET Fig 1. Output Characteristics [A] Top : 1 10 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V SSH7N80A Fig 2. Transfer Characteristics [A] 1 10 VGS ID , Drain Current 0 10 ID , Drain Current 0 10 150 oC 25 oC @ Notes : 1. V = 0 V GS 2. V = 50 V DS - 55 oC 3. 250s Pulse Test 8 10 -1 10 @ Notes : 1. 250s Pulse Test 2. T = 25 oC C 0 10 1 10 -1 10 -1 10 2 4 6 VDS , Drain-Source Voltage [V] [A] VGS , Gate-Source Voltage [V] RDS(on) , [ ] Drain-Source On-Resistance Fig 3. On-Resistance vs. Drain Current 5 Fig 4. Source-Drain Diode Forward Voltage IDR , Reverse Drain Current 4 V = 10 V GS 3 11 0 2 V = 20 V GS 1 @ N t : T = 25 oC oe J 0 0 5 10 15 20 25 10 0 1 0 oC 5 2 oC 5 1 -1 0 02 . 04 . 06 . 08 . @Nts: oe 1 V =0V . GS 2 2 0 s P l e T s .5 us et 10 . 12 . 14 . ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage C = C + C ( C = s o t d) iss gs gd ds h r e C =C +C oss ds gd 20 00 C iss 10 50 C =C rss gd Fig 6. Gate Charge vs. Gate-Source Voltage [V] 20 50 [pF] VGS , Gate-Source Voltage 1 0 6 V =10V DS V =40V 0 DS V =60V 4 DS Capacitance 10 00 @Nts: oe 1 V =0V . GS 2 f=1Mz . H 5 50 0 C oss C rss @Nts:I =70A oe . D 0 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 00 1 0 1 10 VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] SSH7N80A BVDSS , (Normalized) Drain-Source Breakdown Voltage 1.2 N-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature 3.0 RDS(on) , (Normalized) Drain-Source On-Resistance Fig 7. Breakdown Voltage vs. Temperature 2.5 1.1 2.0 1.0 1.5 1.0 @ Notes : 1. V = 10 V GS 2. I = 3.5 A D 0.0 -75 0.9 @ Notes : 1. V = 0 V GS 2. I = 250 A D 0.5 0.8 -75 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 o TJ , Junction Temperature [ C] o TJ , Junction Temperature [ C] Fig 9. Max. Safe Operating Area [A] 10 2 Fig 10. Max. Drain Current vs. Case Temperature [A] 10 s 8 Operation in This Area is Limited by R DS(on) ID , Drain Current ID , Drain Current 6 1 10 100 s 1 ms 10 ms DC 4 0 10 -1 10 @ Notes : 1. T = 25 oC C 2. T = 150 C J 3. Single Pulse o 2 -2 10 1 10 2 10 3 10 0 25 50 75 100 125 150 VDS , Drain-Source Voltage [V] Tc , Case Temperature [oC] Fig 11. Thermal Response 100 Thermal Response D=0.5 0.2 10- 1 0.1 0.05 0.02 0.01 10- 2 single pulse @ Notes : 1. Z J C (t)=0.63 o C/W Max. 2. Duty Factor, D=t/t2 1 3. TJ M -TC =PD M *Z J C (t) Z (t) , PDM t1 t2 JC 10- 5 10- 4 10- 3 10- 2 10- 1 100 101 t 1 , Square Wave Pulse Duration [sec] N-CHANNEL POWER MOSFET Fig 12. Gate Charge Test Circuit & Waveform SSH7N80A * Current Regulator * 50KO 12V 200nF 300nF Same Type as DUT VGS Qg 10V VDS VGS DUT 3mA Qgs Qgd R1 Current Sampling (I G) Resistor R2 Current Sampling (I D) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vin RG DUT 10V Vin 10% Vout VDD ( 0.5 rated V DS ) 90% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms LL VDS Vary tp to obtain required peak ID BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD tp ID RG DUT 10V tp ID (t) VDS (t) Time SSH7N80A N-CHANNEL POWER MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver RG VGS Same Type as DUT VGS VDD * dv/dt controlled by "R * G * IS controlled by Duty Factor "D" VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop |
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